Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III--Nitride Light-Emitting Diodes
نویسندگان
چکیده
The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (20 21), (20 2 1), (10 10), and (0001) planes. Each plane exhibited a characteristic ‘‘critical’’ emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (20 21), (20 2 1), and (10 10) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization. # 2013 The Japan Society of Applied Physics
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